BL24C08F.pdf? Compatible with all I2C bidirectional datatransfer protocol
? Memory array:
8K bits (1024 X 8) of EEPROM
Page size: 16 bytes
? Single supply voltage and high speed:
1 MHzRandom and sequential Read modes
Write:Byte Write within 3 ms
Page Write within 3 ms
Partial Page Writes Allowed
? Write Protect Pin for Hardware Data Protection
? Schmitt Trigger, Filtered Inputs for NoiseSuppression
? High-reliability
Endurance: 1 Million Write Cycles
Data Retention: 100 Years
? Enhanced ESD/Latch-up protection
HBM 5000V
? 8-lead PDIP/SOP/TSSOP and UDFN packages
? Single supply with operation from 4.5-5.5V
? Low power CMOS technology
1 mA active current typical
10 μA standby current typical at 5.5V
? Organized as 4 or 8 blocks of 256
bytes (4 x 256 x 8) or (8 x 256 x 8)
? 2-wire serial interface bus, I2C? compatible
? Schmitt trigger, filtered inputs for noise suppres-sion
? Output slope control to eliminate ground bounce
?100 kHz compatibility
? Self-timed write cycle (including auto-erase)
? Page-write buffer for up to 16 bytes
? 2 ms typical write cycle time for page-write
? Hardware write protect for entire memory
? Can be operated as a serial ROM
? ESD protection > 4,000V
? 1,000,000 ERASE/WRITE cycles guaranteed
? Data retention > 200 years
? 8-pin DIP, 8-lead or 14-lead SOIC packages
? Available for extended temperature range
