Dual N-Channel Enhancement Mode Field Effect Transistor
P5506HVG
P5506HVG.pdf
P5506HVG.pdf
No.10582
FEATURES
? V(BR)DSS: 60V
? RDS(ON): 55mΩ
? ID: 4.5A
DESCRIPTION
? Dual N-Channel Enhancement Mode Field Effect Transistor
APPLICATION CIRCUIT
PIN CONFIGUTION
